Study of the influence of design-technological factors on the conductivity and breakdown voltage of lateral double-diffused MOS transistors using numerical simulation
V. Ya. Niskov, S. N. Zolotarev, A. N. GashkovVolume:
43
Language:
english
Pages:
6
DOI:
10.1134/s1063782609130120
Date:
December, 2009
File:
PDF, 198 KB
english, 2009