Highly efficient photovoltaic cells based on In0.53Ga0.47as...

Semiconductors 2010 / 02 Vol. 44; Iss. 2

Highly efficient photovoltaic cells based on In0.53Ga0.47as alloys with isovalent doping

L. B. Karlina, A. S. Vlasov, M. M. Kulagina, E. P. Rakova, N. Kh. Timoshina, V. M. Andreev
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Volume:
44
Language:
english
Pages:
5
DOI:
10.1134/s1063782610020168
Date:
February, 2010
File:
PDF, 166 KB
english, 2010
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