Effect of the active region thickness on characteristics of...

Semiconductors 2010 / 02 Vol. 44; Iss. 2

Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

D. A. Vinokurov, V. V. Vasilyeva, V. A. Kapitonov, A. V. Lyutetskiy, D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko, A. L. Stankevich, V. V. Shamakhov, N. V. Fetisova, I. S. Tarasov
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Volume:
44
Language:
english
Pages:
5
DOI:
10.1134/s106378261002017x
Date:
February, 2010
File:
PDF, 131 KB
english, 2010
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