X-ray and infrared spectroscopy of layers produced by...

Semiconductors 2010 / 04 Vol. 44; Iss. 4

X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2and Si sources

S. N. Shamin, V. R. Galakhov, V. I. Aksenova, A. N. Karpov, N. L. Shvartz, Z. Sh. Yanovitskaya, V. A. Volodin, I. V. Antonova, T. B. Ezhevskaya, J. Jedrzejewski, E. Savir, I. Balberg
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Volume:
44
Language:
english
Pages:
6
DOI:
10.1134/s1063782610040214
Date:
April, 2010
File:
PDF, 215 KB
english, 2010
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