![](/img/cover-not-exists.png)
Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates
I. P. Smirnova, L. K. Markov, E. M. Arakcheeva, A. S. Pavluchenko, D. A. Zakgeim, M. M. KulaginaVolume:
44
Language:
english
Pages:
4
DOI:
10.1134/s1063782610050192
Date:
May, 2010
File:
PDF, 333 KB
english, 2010