Molecular beam epitaxy of thermodynamically metastable...

Semiconductors 2010 / 05 Vol. 44; Iss. 5

Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

A. N. Semenov, Ya. V. Terent’ev, B. Ya. Meltser, V. A. Solov’ev, T. V. Popova, A. V. Nashchekin, I. A. Andreev, E. V. Kunitsyna, A. A. Usikova, Yu. P. Yakovlev, S. V. Ivanov
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Volume:
44
Language:
english
Pages:
6
DOI:
10.1134/s1063782610050222
Date:
May, 2010
File:
PDF, 264 KB
english, 2010
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