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A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum
E. V. Kalinina, V. G. Kossov, R. R. Yafaev, A. M. Strel’chuk, G. N. ViolinaVolume:
44
Language:
english
Pages:
11
DOI:
10.1134/s1063782610060151
Date:
June, 2010
File:
PDF, 280 KB
english, 2010