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Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)
M. A. Ladugin, A. V. Lyutetskiy, A. A. Marmalyuk, A. A. Padalitsa, N. A. Pikhtin, A. A. Podoskin, N. A. Rudova, S. O. Slipchenko, I. S. Shashkin, A. D. Bondarev, I. S. TarasovVolume:
44
Language:
english
Pages:
5
DOI:
10.1134/s1063782610100222
Date:
October, 2010
File:
PDF, 207 KB
english, 2010