On the nature of electroluminescence at 1.5 μm in the...

Semiconductors 2011 / 01 Vol. 45; Iss. 1

On the nature of electroluminescence at 1.5 μm in the breakdown mode of reverse-biased Er-doped siliconp-n-junction structures grown by sublimation molecular beam epitaxy

A. V. Kornaukhov, A. A. Ezhevskii, M. O. Marychev, D. O. Filatov, V. G. Shengurov
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Volume:
45
Language:
english
Pages:
6
DOI:
10.1134/s106378261101012x
Date:
January, 2011
File:
PDF, 219 KB
english, 2011
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