Effect ofp-njunction overheating on degradation of silicon...

Semiconductors 2011 / 02 Vol. 45; Iss. 2

Effect ofp-njunction overheating on degradation of silicon high-power pulsed IMPATT diodes

A. E. Belyaev, V. V. Basanets, N. S. Boltovets, A. V. Zorenko, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, N. V. Kolesnik, T. V. Korostinskaya, T. V. Kritskaya, Ya. Ya. Kudryk, A. V. Kuchuk, V. V
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Volume:
45
Language:
english
Pages:
7
DOI:
10.1134/s1063782611020047
Date:
February, 2011
File:
PDF, 927 KB
english, 2011
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