Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers
M. V. Shaleev, A. V. Novikov, N. A. Baydakova, A. N. Yablonskiy, O. A. Kuznetsov, D. N. Lobanov, Z. F. KrasilnikVolume:
45
Language:
english
Pages:
5
DOI:
10.1134/s1063782611020199
Date:
February, 2011
File:
PDF, 176 KB
english, 2011