Effect of the silicon doping level and features of...

Semiconductors 2011 / 03 Vol. 45; Iss. 3

Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current

B. Ya. Ber, E. V. Bogdanova, A. A. Greshnov, A. L. Zakgeim, D. Yu. Kazanzev, A. P. Kartashova, A. S. Pavluchenko, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, E. B. Yakimov
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Volume:
45
Language:
english
Pages:
7
DOI:
10.1134/s1063782611030079
Date:
March, 2011
File:
PDF, 228 KB
english, 2011
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