A new InGaP/GaAs tunneling heterostructure-emitter bipolar...

A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, Sheng-Shiun Ye
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Volume:
45
Language:
english
Pages:
4
DOI:
10.1134/s1063782611050137
Date:
May, 2011
File:
PDF, 166 KB
english, 2011
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