Specific features of the anisotropy of low-temperature...

Semiconductors 2011 / 10 Vol. 45; Iss. 10

Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly dopedp-Ge due to the presence of light and heavy holes

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov
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Volume:
45
Language:
english
Pages:
9
DOI:
10.1134/s106378261110023x
Date:
October, 2011
File:
PDF, 300 KB
english, 2011
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