Specific Features and Nature of the 890 nm...

Semiconductors 2011 / 11 Vol. 45; Iss. 11

Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiOxFilms after Low-Temperature Annealing

N. A. Vlasenko, N. V. Sopinskii, E. G. Gule, E. G. Manoilov, P. F. Oleksenko, L. I. Veligura, M. A. Mukhlyo
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Volume:
45
Language:
english
Pages:
6
DOI:
10.1134/s1063782611110273
Date:
November, 2011
File:
PDF, 188 KB
english, 2011
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