Formation of the buffer layer of silicon suboxides SiOxin...

Physics of the Solid State 2009 / 11 Vol. 51; Iss. 11

Formation of the buffer layer of silicon suboxides SiOxin the Si/SiO2low-dimensional heterosystem after Si+ion implantation: SiL2, 3X-ray emission spectra

D. A. Zatsepin, E. A. Panin, S. Kaschieva, H. -J. Fitting, S. N. Shamin
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Volume:
51
Language:
english
Pages:
6
DOI:
10.1134/s1063783409110079
Date:
November, 2009
File:
PDF, 193 KB
english, 2009
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