Effect of annealing on the electrical properties of nitrogen-doped silicon single crystals grown by crucibleless zone melting
G. I. Voronkova, A. V. Batunina, V. V. Voronkov, V. N. Golovina, A. S. Gulyaeva, N. B. Tyurina, M. G. Mil’vidskiĭVolume:
51
Language:
english
Pages:
7
DOI:
10.1134/s1063783409110109
Date:
November, 2009
File:
PDF, 180 KB
english, 2009