Effect of a magnetic field on the rate of etching of...

Effect of a magnetic field on the rate of etching of silicon dioxide in a CF4+ O2plasma

Yu. P. Snitovskii
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Volume:
54
Language:
english
Pages:
5
DOI:
10.1134/s1063784209060218
Date:
June, 2009
File:
PDF, 244 KB
english, 2009
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