Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with...

Technical Physics Letters 2006 / 11 Vol. 32; Iss. 11

Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE

A. N. Alekseev, S. B. Aleksandrov, A. É. Byrnaz, L. É. Velikovskiĭ, I. É. Velikovskiĭ, A. V. Veretekha, D. M. Krasovitskiĭ, M. V. Pavlenko, S. I. Petrov, M. Yu. Pogorel’skiĭ, Yu. V. Pogorel’skiĭ, I. A
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Volume:
32
Language:
english
Pages:
4
DOI:
10.1134/s1063785006110162
Date:
November, 2006
File:
PDF, 200 KB
english, 2006
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