Luminescent properties of GaN-based epitaxial layers and...

Technical Physics Letters 2007 / 01 Vol. 33; Iss. 1

Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates

K. D. Mynbaev, M. G. Mynbaeva, A. S. Zubrilov, N. V. Seredova
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Volume:
33
Language:
english
Pages:
3
DOI:
10.1134/s1063785007010233
Date:
January, 2007
File:
PDF, 172 KB
english, 2007
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