High-power single-mode laser diodes (λ = 1.1–1.2 μm) based on quantum-confined AlInGaAs/InP heterostructures
A. V. Murashova, N. A. Pikhtin, N. V. Fetisova, A. V. Lyutetskiĭ, L. S. Vavilova, V. V. Vasil’eva, A. A. Marmalyuk, Yu. A. Ryaboshtan, I. S. TarasovVolume:
34
Language:
english
Pages:
3
DOI:
10.1134/s1063785008070055
Date:
July, 2008
File:
PDF, 215 KB
english, 2008