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Determining the normal and lateral dark current components inn-pphotodiodes based onp-CdxHg1 −xTe heteroepitaxial structures withx= 0.22
D. Yu. Protasov, V. Ya. Kostyuchenko, A. V. Pavlov, V. V. Vasil’ev, S. A. Dvoretskii, V. S. Varavin, N. N. MikhailovVolume:
35
Language:
english
Pages:
4
DOI:
10.1134/s1063785009060200
Date:
June, 2009
File:
PDF, 211 KB
english, 2009