Features of the recombination processes in InGaN/GaN based...

Technical Physics Letters 2009 / 10 Vol. 35; Iss. 10

Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current

N. S. Averkiev, M. E. Levinshtein, P. V. Petrov, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
35
Language:
english
Pages:
3
DOI:
10.1134/s1063785009100149
Date:
October, 2009
File:
PDF, 156 KB
english, 2009
Conversion to is in progress
Conversion to is failed