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Method for evaluating the parameters of radiation defects and predicting the radiation resistance of MOS transistors
M. N. Levin, E. V. Bondarenko, A. E. Bormontov, A. V. Tatarintsev, V. R. GitlinVolume:
36
Language:
english
Pages:
3
DOI:
10.1134/s1063785010080079
Date:
August, 2010
File:
PDF, 166 KB
english, 2010