Temperature dependence of the dielectric parameters of thin arsenic triselenide layers with high bismuth content
R. A. Castro, V. A. Bordovskiĭ, G. I. GrabkoVolume:
36
Language:
english
Pages:
3
DOI:
10.1134/s1063785010100275
Date:
October, 2010
File:
PDF, 150 KB
english, 2010