Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP...

Technical Physics Letters 2011 / 01 Vol. 37; Iss. 1

Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range

V. V. Sherstnev, D. Starostenko, I. A. Andreev, G. G. Konovalov, N. D. Il’inskaya, O. Yu. Serebrennikova, Yu. P. Yakovlev
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Volume:
37
Language:
english
Pages:
3
DOI:
10.1134/s1063785011010135
Date:
January, 2011
File:
PDF, 190 KB
english, 2011
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