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Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions
M. T. Normuradov, A. K. Tashatov, A. S. Rysbaev, Zh. B. Khuzhaniyazov, Yu. Yu. Yuldashev, Yu. D. Kholikov, S. S. NasriddinovVolume:
52
Language:
english
Pages:
3
DOI:
10.1134/s1064226907080104
Date:
August, 2007
File:
PDF, 185 KB
english, 2007