Investigation of Ge and C layer deposition on a Si...

Bulletin of the Russian Academy of Sciences: Physics 2010 / 02 Vol. 74; Iss. 2

Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling

V. S. Kharlamov, D. V. Kulikov, Yu. V. Trushin, P. Nader, P. Mazri, Th. Stauden, J. Pezoldt
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Volume:
74
Language:
english
Pages:
4
DOI:
10.3103/s1062873810020292
Date:
February, 2010
File:
PDF, 193 KB
english, 2010
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