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On the effect of the electron distribution in the near-contact region and asymmetry of the resonant-tunneling diode structure on the high-frequency response and the possibility of detecting the quantum amplification mode in an external high-frequency electric field
O. A. Klimenko, N. V. D’yakonova, V. Knap, Yu. A. Mityagin, V. N. Murzin, S. A. Savinov, V. S. Syzranov, V. A. ChuenkovVolume:
36
Language:
english
Pages:
8
DOI:
10.3103/s1068335609010047
Date:
January, 2009
File:
PDF, 749 KB
english, 2009