Control of carbon incorporation in AlAs grown by atomic...

Journal of Materials Science: Materials in Electronics 2000 / 02 Vol. 11; Iss. 1

Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates

Shingo Hirose, Akihiro Yoshida, Masaaki Yamaura, Nobuo Kano, Hiro Munekata
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Volume:
11
Language:
english
Pages:
4
DOI:
10.1023/a:1008991717393
Date:
February, 2000
File:
PDF, 98 KB
english, 2000
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