Promising CMOS ICs Based on Si/CaF2/Si Epitaxial Layers

Russian Microelectronics 2001 / 03 Vol. 30; Iss. 2

Promising CMOS ICs Based on Si/CaF2/Si Epitaxial Layers

A. A. Altukhov, A. Yu. Mityagin
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Volume:
30
Language:
english
Pages:
5
DOI:
10.1023/a:1009429826864
Date:
March, 2001
File:
PDF, 191 KB
english, 2001
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