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The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy
B. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'yeva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. SubachVolume:
43
Language:
english
Pages:
5
DOI:
10.1023/a:1009476531833
Date:
October, 2000
File:
PDF, 287 KB
english, 2000