Fully relaxed Si0.7Ge0.3buffers grown on patterned silicon...

Journal of Materials Science: Materials in Electronics 2001 / 06 Vol. 12; Iss. 4-6

Fully relaxed Si0.7Ge0.3buffers grown on patterned silicon substrates for hetero-CMOS transistors

G. Wöhl, E. Kasper, T. Hackbarth, H. Kibbel, M. Klose, F. Ernst
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Volume:
12
Language:
english
Pages:
6
DOI:
10.1023/a:1011207319652
Date:
June, 2001
File:
PDF, 1.08 MB
english, 2001
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