C–V, DLTS and conductance transient characterization of...

Journal of Materials Science: Materials in Electronics 2001 / 06 Vol. 12; Iss. 4-6

C–V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N2remote plasma cleaning of the InP surface

H. Castán, S. Dueñas, J. Barbolla, E. Redondo, I. Mártil, G. González-Díaz
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Volume:
12
Language:
english
Pages:
5
DOI:
10.1023/a:1011219622378
Date:
June, 2001
File:
PDF, 665 KB
english, 2001
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