Effect of nitridation on Fowler–Nordheim tunneling...

Journal of Materials Science: Materials in Electronics 2001 / 06 Vol. 12; Iss. 4-6

Effect of nitridation on Fowler–Nordheim tunneling coefficients in SiO2MOS capacitors with WSi2-polysilicon gate

S. Croci, C. Plossu, B. Balland, C. Dubois, P. Boivin
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Volume:
12
Language:
english
Pages:
6
DOI:
10.1023/a:1011248428738
Date:
June, 2001
File:
PDF, 346 KB
english, 2001
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