Antimony and boron diffusion in SiGe and Si under the...

Journal of Materials Science: Materials in Electronics 2001 / 06 Vol. 12; Iss. 4-6

Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

J. M. Bonar, A. F. W. Willoughby, A. H. Dan, B. M. McGregor, W. Lerch, D. Loeffelmacher, G. A. Cooke, M. G. Dowsett
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Volume:
12
Language:
english
Pages:
3
DOI:
10.1023/a:1011299017835
Date:
June, 2001
File:
PDF, 222 KB
english, 2001
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