Mechanism for Conversion of the Conductivity Type in Arsenic-Doped p-CdxHg1–xTe Subject to Ionic Etching
V. V. Bogoboyashchii, A. P. Vlasov, I. I. IzhninVolume:
44
Language:
english
Pages:
10
DOI:
10.1023/a:1011312902981
Date:
January, 2001
File:
PDF, 87 KB
english, 2001