Diffusion barrier properties of ionized metal plasma...

Journal of Materials Science 2001 / 12 Vol. 36; Iss. 24

Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

Khin Maung Latt, Y. K. Lee, H. L. Seng, T. Osipowicz
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Volume:
36
Language:
english
Pages:
7
DOI:
10.1023/a:1013088624226
Date:
December, 2001
File:
PDF, 412 KB
english, 2001
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