Evolution of microstructure during annealing of low-dose...

Journal of Materials Science: Materials in Electronics 2002 / 05 Vol. 13; Iss. 5

Evolution of microstructure during annealing of low-dose SIMOX wafers implanted at 65 keV

B. Johnson, Jun Sik Jeoung, P. Anderson, Supapan Seraphin
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Volume:
13
Language:
english
Pages:
6
DOI:
10.1023/a:1015528226182
Date:
May, 2002
File:
PDF, 898 KB
english, 2002
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