Oxygen impurities in Ga0.51In0.49P grown by solid-source...

Journal of Materials Science: Materials in Electronics 2002 / 09 Vol. 13; Iss. 9

Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular beam epitaxy

N. Xiang, A. Tukiainen, M. Pessa, J. Dekker, J. Likonen
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Volume:
13
Language:
english
Pages:
4
DOI:
10.1023/a:1019673614143
Date:
September, 2002
File:
PDF, 328 KB
english, 2002
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