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Low-Temperature Molecular-Beam Epitaxy of GaAs: Effect of Excess Arsenic on the Structure and Properties of the GaAs Layers
L. G. Lavrent'eva, M. D. Vilisova, V. V. Preobrazhenskii, V. V. ChaldyshevVolume:
45
Language:
english
Pages:
18
DOI:
10.1023/a:1021965211576
Date:
August, 2002
File:
PDF, 388 KB
english, 2002