High-Permittivity-Insulator EEPROM Cell Using Al2O3or ZrO2

Russian Microelectronics 2003 / 03 Vol. 32; Iss. 2

High-Permittivity-Insulator EEPROM Cell Using Al2O3or ZrO2

V. A. Gritsenko, K. A. Nasyrov, Yu. N. Novikov, A. L. Aseev
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
32
Language:
english
Pages:
6
DOI:
10.1023/a:1022639732090
Date:
March, 2003
File:
PDF, 49 KB
english, 2003
Conversion to is in progress
Conversion to is failed