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Effect of the Arsenic Concentration on the Characteristics of the Growth Step Echelon in GaAs Epitaxy
I. V. Ivonin, L. G. Lavrent'eva, G. A. Aleksandrova, L. L. Devyat'yarovaVolume:
45
Language:
english
Pages:
4
DOI:
10.1023/a:1022815017262
Date:
October, 2002
File:
PDF, 235 KB
english, 2002