Characterization of GaN and InxGa1−xN films grown by MOCVD...

Journal of Materials Science: Materials in Electronics 2003 / 04 Vol. 14; Iss. 4

Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

K. S. Ramaiah, D. Huang, M. A. Reshchikov, F. Yun, H. Morkoç, J. Jasinski, Z. Liliental-Weber, C. Sone, S. S. Park, K. Y. Lee
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Volume:
14
Language:
english
Pages:
13
DOI:
10.1023/a:1022938114450
Date:
April, 2003
File:
PDF, 1.72 MB
english, 2003
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