Development of GaAs Epitaxy from Bulk to Ultrathin Films....

Development of GaAs Epitaxy from Bulk to Ultrathin Films. Growth for Nanostructure Devices

Jun-Ichi Nishizawa, Toru Kurabayashi
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Volume:
46
Language:
english
Pages:
9
DOI:
10.1023/b:rupj.0000008181.25192.37
Date:
June, 2003
File:
PDF, 359 KB
english, 2003
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