Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion...

IEEE Electron Device Letters 2006 Vol. 27; Iss. 4

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

Recht, F., McCarthy, L., Rajan, S., Chakraborty, A., Poblenz, C., Corrion, A., Speck, J.S., Mishra, U.K.
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Volume:
27
Year:
2006
Language:
english
Pages:
3
DOI:
10.1109/led.2006.870419
File:
PDF, 155 KB
english, 2006
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