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Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal–oxide–semiconductor field-effect transistors
Lukyanchikova, N. B., Petrichuk, M. V., Garbar, N., Mercha, A., Simoen, E., Claeys, C.Volume:
94
Year:
2003
Language:
english
DOI:
10.1063/1.1604452
File:
PDF, 503 KB
english, 2003