Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface
Lukyanchikova, N B, Petrichuk, M V, Garbar, N P, Simoen, E, Claeys, CVolume:
14
Year:
1999
Language:
english
Pages:
9
DOI:
10.1088/0268-1242/14/9/306
File:
PDF, 301 KB
english, 1999