Effects of the lateral ordering of self-assembled SiGe...

Semiconductors 2012 / 05 Vol. 46; Iss. 5

Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1 −xGexbuffer layers

Strelchuk, V. V., Nikolenko, A. S., Lytvyn, P. M., Kladko, V. P., Gudymenko, A. I., Valakh, M. Ya., Krasilnik, Z. F., Lobanov, D. N., Novikov, A. V.
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Volume:
46
Language:
english
Pages:
8
DOI:
10.1134/s1063782612050211
Date:
May, 2012
File:
PDF, 672 KB
english, 2012
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