Comparison of charge yield in MOS devices for different...

IEEE Transactions on Nuclear Science 2002 Vol. 49; Iss. 6

Comparison of charge yield in MOS devices for different radiation sources

Paillet, P., Schwank, J.R., Shaneyfelt, M.R., Ferlet-Cavrois, V., Jones, R.L., Flament, O., Blackmore, E.W.
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Volume:
49
Year:
2002
Language:
english
Pages:
6
DOI:
10.1109/tns.2002.805438
File:
PDF, 382 KB
english, 2002
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